| PART |
Description |
Maker |
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管（漏电.7A, 漏源电压60V，导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| NDT452 NDT452AP NDT452APJ23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| NDT410EL NDT410ELJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FS7KM12 |
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,7A I(D),SOT-186
|
Mitsubishi Electric & Electronics USA
|
| BCX18L BCX19L BCX17L |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 25V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
|
Avic Technology
|
| BCX70H BCX70HT_R BCX70JT/R BCX70HT/R |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | SOT-23 晶体管|晶体管|叩| 45V的五（巴西）总裁| 200mA的一（c）| SOT - 23封装
TRANSISTOR|BJT|NPN|45VV(BR)CEO|200MAI(C)|SOT-23
|
POSEICO SPA
EPCOS AG
|
| 2SK1724 |
TRANSISTOR|MOSFET|N-CHANNEL|30VV(BR)DSS|1AI(D)|SOT-89
Very High-Speed Switching Applications
|
Sanyo Semicon Device
|
| DTC124TC DTA124TC DTA1D3RE DTC1D3RE DTA114WC DTC11 |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-23
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | TO-92VAR
TRANSISTOR | SIP
晶体管| 50V五（巴西）总裁| 100mA的一c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五（巴西）总裁| 100mA的一c）|的SOT - 23VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁|提供70mA一（c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 23VAR
|
FCI
Analog Devices, Inc.
Rohm Co., Ltd.
TE Connectivity, Ltd.
Diodes, Inc.
Kingbright, Corp.
|
| BSR13T/R BSR14T/R |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SOT-23 晶体管|晶体管|叩| 40V的五（巴西）总裁| 800mA的一（c）| SOT - 23封装
|
Advanced Semiconductor, Inc.
|
